SELECTED RECENT PUBLICATIONS

 

 

BOOK:

 

Albert Wang, On-Chip ESD Protection for Integrated Circuits – An IC Design Perspective, Kluwer Academic Publishers, Boston, 2002, ISBN: 0-7923-7647-1.

 

 

SELECTED TOPICAL PUBLICARIONS

 

On-Chip ESD Protection for RF/AMS ICs:

·        A. Wang, L. Lin, X. Wang and H. Liu, “Emerging Challenges in ESD Protection for RF ICs in CMOS”, Invited, to appear, J. of Semiconductor, 2008.

·        X. Guan, G. Chen, L. Lin, X. Wang, Albert Wang, L. Yang and B. Zhao, “A New ESD-Aware Power Amplifier Design Method”, Proc. IEEE ASICON, pp1363-1366, 2007.

·        Albert Wang, H. Feng, R. Zhan, H. Xie, G. Chen, Q. Wu, X. Guan, Z. Wang and C. Zhang, “A Review on RF ESD Protection Design”, IEEE Trans. Electron Devices, Vol. 52, No. 7, pp. 1304-1311, July 2005.

·        H. Xie, H. Feng, R. Zhan, Albert Wang, D. Rodriguez and D. Rice, “A New Low-Parasitic Polysilicon SCR ESD Protection Structure for RF ICs”, IEEE Electron Device Letters, Vol. 26, No.2, pp.121-123, February 2005.

·        R. Zhan, H. Feng, Q. Wu, H. Xie, X. Guan, G. Chen and Albert Z. Wang, “ESDInspector: A New Layout-level ESD Protection Circuitry Design Verification Tool Using A Smart-Parametric Checking Mechanism”, IEEE Trans. CAD of Integrated Circuits and Systems, Vol. 23, No. 10, pp.1421-1428, October 2004.

·        G. Chen, H. Feng, H. Xie, R. Zhan, Q. Wu, X. Guan, Albert Wang, K. Takasuka, S. Tamura, Z. Wang and C. Zhang, “Characterizing Diodes For RF ESD Protection”, IEEE Electron Device Letters, Vol. 25, No. 5, pp.323-325, May 2004.

·        H. Feng, R. Zhan, G. Chen, Q. Wu and Albert Z. Wang, “Electrostatic Discharge Protection for RF Integrated Circuits: New ESD Design Challenges”, Analog Integrated Circuits and Signal Processing, An International Journal, Vol. 39, Issue 1, pp. 5-19, April 2004.

·        R. Zhan, H. Feng, Q. Wu and Albert Wang, “ESDExtractor: A New Technology-Independent CAD Tool for Arbitrary ESD Protection Device Extraction,IEEE Trans. CAD of Integrated Circuits and Systems, Vol. 22, No. 10, pp.1362-1370, October 2003.

·        H. Feng, G. Chen, R. Zhan, Q. Wu, X. Guan, H. Xie, Albert Wang and R. Gafiteanu, “A Mixed-Mode ESD Protection Circuit Simulation-Design Methodology,” IEEE J. Solid-State Circuits, V38, N6, pp.995-1006, June 2003.

·        H. Feng, R. Zhan, Q. Wu, G. Chen and Albert Wang, “RC-SCR: A Very-Low-Voltage ESD Protection Circuit in Plain CMOS,” IEE Electronics Letters, V38, N19, pp.1099-1100, September 2002.

·        H. G. Feng, R. Y. Zhan, Q. Wu, G. Chen and Albert Z. Wang,A Circular Under-Pad Multiple-Mode ESD Protection Structure for ICs,IEE Electronics Letters, V38, N11, pp. 511 –513, May 2002.

·        H. G. Feng, K. Gong, R. Zhan and Albert Wang, “A Novel all-Direction on-Chip Protection Circuit,” IEICE Trans. Electron., Vol. E85-C, N3, pp.566-571, March 2002.

·        K. Gong, H. Feng, R. Zhan and Albert Z. Wang, “A Study of Parasitic Effects of ESD Protection on RF ICs,” IEEE Trans. Microwave Theory and Techniques, V50, N1, pp.393-402, January 2002.

·        H. Feng, R. Zhan, K. Gong and Albert Z. Wang, “A New Pad-Oriented Multiple-Mode ESD Protection Structure and Layout Optimization,” IEEE Electron Device Letters, V22, N10, pp.493-495, Oct. 2001.

·        K. Gong, H. G. Feng, R. Y. Zhan and Albert Z. Wang, “ESD-Induced Circuit Performance Degradation in RFICs,” Microelectronics Reliability, V41, Issue 9-10, PERGAMON, Elsevier Science, pp.1379-1383, September-October 2001.

·        Albert Z. Wang, H. G. Feng, K. Gong, R. Y. Zhan and J. Stine, “On-Chip ESD Protection Design for Integrated Circuits: an Overview for IC Designers,” Microelectronics Journal, Elsevier Science, V32, Issue 9, pp.733-747, September 2001.

·        H. G. Feng, K. Gong, R. Zhan and Albert Wang, “A Pad-Oriented Novel Electrostatic Discharge Protection Structure For Mixed-Signal ICs,” in Advances in Systems Science: Measurement, Circuits and Control, Edited by N. Mastorakis and L. Pecorelli-Peres, Electrical and Computer Engineering Series, WSES Press, 2001, pp.159-163.

·        H. G. Feng, K. Gong, and Albert Z. Wang, “A Novel on-Chip Electrostatic Discharge Protection Design for RFIC’s,” Microelectronics Journal, V32, Issue 3, Elsevier Science, pp 189-195, March 2001.

·        Albert Wang and C. Tsay, “On a Dual-Direction on-Chip Electrostatic Discharge Protection Structure,” IEEE Trans. Electron Devices, V48, N5, pp.978-984, May 2001.

·        Albert Wang and C. Tsay, “An on-Chip ESD Protection Circuit with Low Trigger-Voltage in BiCMOS Technology,” IEEE J. Solid-State Circuits, V36, N1, pp.40-45, January 2001.

·        Albert Wang, C. Tsay, and P. Deane, “A Study of NMOS Behaviors under ESD Stress: Simulation and Characterization,” Microelectronics Reliability, V38, Issue 6-8, PERGAMON, Elsevier Science, pp.1183-1186, 1998.

·        Albert Wang, H. Feng, R. Zhan, H. Xie, G. Chen and X. Guan,RF ESD Protection for VDSM Si Technology, Proc. ECS 5th Int’l Semiconductor Technology Conference (ECS-ISTC), 2006.

·        G. Chen, H. Feng, Albert Wang and Y. Cheng, “Noise Analysis of ESD Structures and Impacts on a Fully-Integrated 5.5GHz LNA in 0.18mm SiGe BiCMOS”, Proc. IEEE 35th European Microwave Conference, October 2005.

·        R. Zhan, H. Xie, H. Feng and Albert Wang, “ESDZapper: A New Layout-level Verification Tool for Finding Critical Discharging Path under ESD Stress”, Proc. IEEE Asia South Pacific Design Automation Conference (ASP-DAC), pp. 79-82, 2005.

·        H. Xie, R. Zhan and Albert Wang, “3D Electro-Thermal Modeling of GGNMOS ESD Protection Structure”, Proc. IEEE Asia-Pacific Conf. on Circuits and Systems (APC-CAS), pp.61-64, 2004.

·        G. Chen and Albert Wang, “Evaluating RF ESD Protection Design: An Overview”, Proc. IEEE 11th International Symp. Physical & Failure Analysis of ICs (IPFA), pp205-208, 2004.

·        G. Chen, H. Feng, H. Xie, R. Zhan, Q. Wu, X. Guan, Albert Wang, K. Takasuka, S. Tamura, Z. Wang and C. Zhang, “RF Characterization of ESD Protection Structures”, Proc. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), pp.379-382, 2004.

·        Albert Z. Wang, H. Feng, G. Chen, R. Zhan, H. Xie, Q. Wu and X. Guan, “Key Aspects For ESD Protection Design In ICs: Mixed-Mode Simulation And RF/Mixed-Signal ESD Protection,” IEEE 25th Int’l Conf. on ASIC (ASICON), pp.1000-1005, 2003.

·        H. Feng, R. Zhan, Q. Wu, G. Chen, X. Guan, H. Xie and Albert Z. Wang, “Mixed-Mode ESD Protection Circuit Simulation-Design Methodology,” Proc. IEEE Int’l Symp. Circuits and Systems (ISCAS), V1, pp.652-655, 2003.

·        H. Feng, R. Zhan, G. Chen, Q. Wu, X. Guan, H. Xie and Albert Wang, “Bonding-Pad-Oriented on-Chip ESD Protection Structures for ICs,” Proc. IEEE Int’l Symp. Circuits and Systems (ISCAS), V 4, pp.741-744, 2003.

·        G. Chen, H. Feng and Albert Wang, “A Systematic Study of ESD Protection Structures for RF ICs,” Proc. IEEE Symp. RF Integrated Circuits (RFIC), pp.347-350, 2003.

·        Albert Wang, “Recent Developments in ESD Protection for RF ICs,” Proc. IEEE Asia South Pacific Design Automation Conference (ASP-DAC), pp.171-178, 2003.

·        Albert Z. Wang, H. Feng, R. Zhan, G. Chen and Q. Wu, “ESD Protection Design for RF Integrated Circuits: New Challenges,Proc. IEEE Custom Integrated Circuits Conference (CICC), pp.411-418, 2002.

·        K. Gong, H. Feng, R. Zhan and Albert Z. Wang, “ESD-Induced Circuit Performance Degradation in RFICs,” IEEE Proc. European Symp. Reliability of Electron Devices Failure Physics & Analysis (ESREF), pp.1379-1383, 2001.

·        H. G. Feng, K. Gong, R. Zhan and Albert Wang, “A Pad-Oriented Novel Electrostatic Discharge Protection Structure For Mixed-Signal ICs,” Proc. WSES/IEEE Conferences: 5th Circuits, Systems, Communications & Computers, pp.3421-3425, 2001.

·        H. G. Feng, K. Gong, R. Zhan and Albert Wang, “A Novel all-Direction on-Chip Protection Circuit,” Proc. IEEE/IEICE Int’l Symp. Signals, Systems, and Electronics (ISSSE), pp.118-121, 2001.

·        H. G. Feng, K. Gong and Albert Wang, “An ESD Protection Circuit for Mixed-Signal ICs,” Proc. IEEE CICC, pp.493-496, 2001.

·        H. G. Feng, K. Gong and Albert Wang, “A New Integrated Metal-Semiconductor Simulation Methodology for on-Chip Electrostatic Discharge Protection Design Optimization“, Proc. IEEE/IFIP World Computer Congress Int’l Conference on Design Automation, pp.81–85, 2000.

·        H. G. Feng, K. Gong and Albert Wang, “A Comparison Study of ESD Protection for RFIC’s: Performance vs. Parasitics,” Proc. IEEE RFIC Symp., pp.235-238, 2000.

·        Albert Z. Wang, “A New Design for Complete on-Chip ESD Protection,” Proc. IEEE Custom Integrated Circuits Conference, pp. 87-90, 2000.

·        Albert Z. Wang and C. H. Tsay, “A Compact Square-Cell ESD Structure for BiCMOS ICs,” Proc. IEEE BCTM, pp. 46-49, 1999.

·        Albert Wang, C. Tsay and Q. Shan, “A Novel Dual-Direction IC ESD Protection Device,” Proc. IEEE 7th Int’l Symp. Physical and Failure Analysis of Integrated Circuits, pp.151-155, 1999.

·        Albert Wang, C. Tsay, J. Bielawski and L. DeClue, “Design Optimization of a Practical ESD Protection Circuit by CAD: A Case Study,” Proc. IEEE 13th UGIM Symp., pp. 116-119, 1999.

·        Albert Wang and C. Tsay, “A Low-Triggering Circuitry for Dual-Direction ESD Protection,” Proc. IEEE Custom Integrated Circuits Conference, pp 139-142, 1999.

·        Albert Wang, C. Tsay, A. Lele and P. Deane, “A Study of NMOS Behaviors under ESD Stress: Simulation and Characterization,” Proc. IEEE 9th European Symp. Reliability of Electron Devices Failure Physics & Analysis, pp.151-155, 1998.

 

 

 

RF Inductors:

·        C. Yang, F. Liu, T. L. Ren, L. T. Liu, G. Chen, X. K. Guan, Albert Wang and Z. Yue,Ferrite-Partially-Filled on-Chip RF Inductor Fabricated Using Low-Temperature Nano-Powder-Mixed-Photoresist Filling Technique for Standard CMOS”, Accepted, IEEE IEDM Digest, 2007.

·        C. Yang, F. Liu, T. Ren, L. Liu, G. Chen, X. Guan, Albert Wang and H. Feng, “Ferrite-Integrated on-Chip Inductors for RF ICs “, IEEE Electron Device Letters, Vol. 28, No. 7, pp652-655, July 2007.

·        F. Liu, C, Yang, T. Ren, Albert Wang, J. Yu and L. Liu, “NiCuZn Ferrite Thin Films Grown by a sol-gel Method and Rapid Thermal Annealing,” J. of Magnetism and Magnetic Materials, V309, Issue 1, pp.17-21, March 2007.

·        C. Yang, F. Liu, T. Ren, L. Liu, H. Feng, Albert Wang and H. Long, “Fully Integrated Ferrite-Based Inductors for RF ICs”, Sensors & Actuators: A. Physical, A 130-131, p365-370, 2006.

·        F. Liu, T. Ren, C. Yang, L. Liu, Albert Wang, and J. Yu, “NiCuZn Ferrite Thin Films for RF Integrated Inductors,” Materials Letter, Vol. 60, pp. 1403-1406, 2006.

·        T. Ren, C. Yang, F. Liu, L. Liu, Albert Z. Wang and X. Zhang, “Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film,” Journal of Semiconductors, Vol. 27, pp. 511-515, 2006.

·        C. Yang, F. Liu, T. Ren, L. Liu, H. Feng, Z. Albert Wang, H. Long and J. Yu, “RF Integrated Inductor with CoZrO Ferrite Thin Film,” Journal of Semiconductors, Vol. 26, pp. 2208-2212, 2005.

·        H. Long, Z. Feng, H. Feng, Albert Wang, Tianling, Ren, Junbo Bao, Feng Liu, Chen Yang, Xiao Zhang, “A New Modeling Technique for Simulating 3D Arbitrary Conductor-Magnet Structures for RFIC Applications”, IEEE Tans. Electron Devices, Vol. 52, No. 7, pp. 1354-1363, July 2005.

·        H. Long, Z. Feng, H. Feng and Albert Wang, “A Novel Accurate PEEC-based 3D Modeling Technique for RF Devices of Arbitrary Conductor-Magnet Structure,” Microwave and Optical Technology Letters, V38, Issue 3, Wiley & Sons, pp.237-240, August 2003.

·        C. Yang, F. Liu, T. Ren, L. Liu, G. Chen, X. Guan, Albert Wang and Z. Yue, “Ni-Zn Ferrite Film Coated on-Chip RF Inductor Fabricated by A Novel Powder-Mixed-Photoresist Spin-Coating Technique”, Proc. IEEE MTT-S Int’l Microwave Symposium (IMS), pp465-468, 2007.

·        C. Yang, F. Liu, T. Ren, L. Liu, G. Chen, X. Guan and Albert Wang, “Magnetic film inductors for RF IC”, Proc. ECS Int’l Semiconductor Technology Conference (ECS-ISTC), pp447-462, 2007.

·        C. Yang, F. Liu, T. Ren, L. Liu and Albert Z. Wang, “On-Chip Integrated Inductors with Ferrite Thin-Films for RFIC”, Tech. Digest, IEEE International Electron Devices Meeting (IEDM), pp225-228, 2006.

·        C. Yang, F. Liu, T. Ren, L. Liu and Albert Z. Wang, “On-Chip Integrated Inductors with Ni-Zn-Cu-Fe and Y-Bi-Fe Thin-Films for RF IC”, Proc. 34th IEEE European Solid-State Device Research Conf (ESSDERC), pp. 194-197, September 2006.

·        F. Liu, C. Yang, T. L. Ren, L. T. Liu, H. G. Feng, Albert Z. Wang, H. B. Long and J Yu, “Fully Integrated Ferrite-Based Inductors for RF ICs”, Proc. IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Vol 1, pp.895 - 898, 2005.

·        H. Long, Z. Feng, H. Feng, Albert Wang and T. Ren, “L-SIMULATOR: A MAGPEEC-Based new CAD Tool for Simulating Magnetic-Enhanced IC Inductors of 3D Arbitrary Geometry”, Proc. IEEE International Symp. Circuits and Systems (ISCAS), Vol 5, pp. V-233/237, 2004.

·        H. Long, Z. Feng, H, Feng and Albert Wang, “magPEEC: Extended PEEC Modeling for 3D Arbitrary Electro-Magnetic Devices with Application for M-Cored Inductors,” Proc. IEEE Symp. RF Integrated Circuits (RFIC), pp.251-254, 2003.

·        H. Feng, G. Jelodin, K. Gong, R. Zhan, Q. Wu, C. Chen and Albert Wang, “Super Compact RFIC Inductors in 0.18mm CMOS with Copper Interconnects,” Proc. IEEE Microwave Symposium Digest, 2002, IEEE MTT-S International, V1, pp. 553 –556, 2002.

 

 

 

RF/AMS ESD Protection Circuit Design Method:

·        X. Guan, G. Chen, L. Lin, X. Wang, Albert Wang, L. Yang and B. Zhao, “A New ESD-Aware Power Amplifier Design Method”, Proc. IEEE ASICON, pp1363-1366, 2007.

·        H. Xie, R. Zhan, H. Feng, G. Chen, Albert Wang and R. Gafiteanu, “A 3D Mixed-Mode ESD Protection Circuit Simulation-Design Methodology”, Proc. IEEE Custom Integrated Circuits Conference (CICC), pp243-246, 2004.

·        R. Zhan, H. Feng, Q. Wu, H. Xie, X. Guan, G. Chen and Albert Z. Wang, “ESDInspector: A New Layout-level ESD Protection Circuitry Design Verification Tool Using A Smart-Parametric Checking Mechanism”, IEEE Trans. CAD of Integrated Circuits and Systems, Vol. 23, No. 10, pp.1421-1428, October